Silicon On Sapphire Wafers

Polished r plane sapphire wafers for sos valley design offers thinning and polishing services on customer supplied sos wafers.

Silicon on sapphire wafers.

Pam xiamen offers 3 silicon wafer. See bottom for more sos inventory. The majority of the second substrate is subsequently. Wafer bonding the insulating layer is formed by directly bonding oxidized silicon with a second substrate.

Wafers for metasurfaces research 600nm thick silicon deposited on on sapphire wafers have been used from research clients for their academic research metasurfaces. Pam xiamen offers 2 silicon wafer. R plane sapphire 1 102 57 6 degrees to c plane is the preferred material for silicon on sapphire used in semiconductor microwave and pressure transducer applications. Typically high purity artificially grown sapphire crystals.

Please provide us with your specs quantity for an immediate quote. Sio 2 based soi wafers can be produced by several methods. Resistivity ωcm comment si 3 p p semi test unsealed t si 3 p p semi test unsealed t n type si p 100 0 1 3 380 p e fz 5 000 semi test bad lasermark on back. Sapphire thickness 460 25um we have 400nm sos based on 460um dsp r sapphire if need ssp sos we have it with 600nm si on 460 25um ssp sapphire.

This coupled with the lower hole and electron mobilities caused by defects ultimately results in sos wafers yielding mos devices with poorer performance in. Simox separation by implantation of oxygen uses an oxygen ion beam implantation process followed by high temperature annealing to create a buried sio 2 layer. Sapphire wafers are manufactured from single crystal sapphire ingot making them ideal for demanding applications such as laser systems because of their extreme surface hardness high thermal conductivity high dielectric constant and resistance to common chemical acids and alkalis. Resistivity ωcm comment p type si b 100 2 280 p e 0 5 0 6 prime no flats p type si b 100 2 280 p e 0 08 0 10 semi prime p type si b 100 2 1000 p e 0 073 0 090 semi prime p type si b 100 2 250 p p 0 02 0 04 semi prime p type si b 100 2 225 p p 0 015 0 020 semi prime p.

Below are just some of the sos wafers that we can make. The difference between the coefficients of thermal expansion of silicon and sapphire also results in a residual stress within the silicon layer which tends to reduce hole mobility. Our sapphire wafers are the second hardest crystals and because of sapphire s structural strength sapphire. Silicon on sapphire sos is a hetero epitaxial process for metal oxide semiconductor mos integrated circuit ic manufacturing that consists of a thin layer typically thinner than 0 6 µm of silicon grown on a sapphire al 2 o 3 wafer sos is part of the silicon on insulator soi family of cmos complementary mos technologies.