Silicon On Sapphire Technology

Silicon on sapphire sos is a hetero epitaxial process for metal oxide semiconductor mos integrated circuit ic manufacturing that consists of a thin layer typically thinner than 0 6 µm of silicon grown on a sapphire al 2 o 3 wafer sos is part of the silicon on insulator soi family of cmos complementary mos technologies.

Silicon on sapphire technology.

Natural sapphire tends to contain impurities so very pure sapphire crystal is grown in a controlled lab environment. The technical part of silicon on sapphire technology. The soi structure was created for the first time using sos. Sos technology deposits a thin layer of silicon onto a sapphire wafer at high temperature.

Sensonetics offers pressure sensor products for food medical plastic melt extrusion blow molding injection molding mold cavity hydraulic systems aerospace petroleum downhole submersible deep water and subsea applications. The silicon wheatstone bridge formed during the manufacturing stage is free from any residual stresses that may add to hysteresis and non repeatability errors that might decrease long term. Sapphire wafers are cut at a specific angle to allow silicon atoms to bond to them to form sio2 on their surface. Silicon on sapphire sos is another soi technology that has some further advantages for fabrication of cmos circuitry in microwave applications because of the low loss dielectric substrate.

Offers a silicon on sapphire sos pressure transducer or pressure transmitter that can operate at ultra high temperatures. Sapphire is used as the substrate in the production of silicon on sapphire sos wafers used in the production of high performance radio frequency integrated circuits rfics. Utilizing silicon on sapphire sensing technology results in excellent long term stability of 0 2 a major advantage over non sos bonded silicon sensors. The desired silicon orientation is 100 which has been achieved on various sapphire orientations i e 1102 0112 1012.

The sio2 is an atomic extension of the sapphire itself a process known as epitaxial growth which makes sos technology possible. As in any technology sos has some inherent drawbacks that need to be addressed before its benefits can be realized. The formed sapphire ingots are cut at a 60º angle. Typically high purity artificially grown sapphire crystals.

Aggressive scaling of device dimensions. Silicon on sapphire sos mosfets offer many advantages such as reduced device and interconnect capacitance availability of complementary devices with high microwave gain and excellent device isolation which make sos technology a worthwhile choice for many applications. To meet future wireless communications demands two areas must be addressed. Mobile devices smart phones and other electronics benefit from sos rfics through reduced energy consumption improved performance and smaller form factors as compared to less efficient rfic technologies.